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| VHM40-06P1 CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base K 12 ID25 = 38 A VDSS = 600 V RDSon = 70 m 1) L4 L6 L9 P 18 R 18 K 13 K10 T 18 V 18 X 18 Pin arangement see outlines F10 Preliminary data sheet NTC MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25C TC = 90C VDS < VDSS; IF 50A;diF/dt 200A/s TVJ = 150C ID = 10 A; L = 36 mH; TC = 25C ID = 20 A; L = 5 H; TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 600 20 38 25 6 1.8 1 V V A A V/ns J mJ Features ECO-PAC 2 with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - solderable pins for DCB mounting fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 70 m 3.5 60 5.5 V Applications RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC VGS = 10 V; ID = ID90 VDS = 20 V; ID = 3 mA; VDS = VDSS; VGS = 0 V; TVJ = 25C TVJ = 125C VGS = 20 V; VDS = 0 V VGS= 10 V; VDS = 350 V; ID = 50 A 220 55 125 30 95 100 10 0.9 Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating 25 A A 100 nA nC nC nC ns ns ns ns 1.1 V VGS= 10 V; VDS = 380 V; ID = 25 A; RG = 1.8 (reverse conduction) IF = 20 A; VGS = 0 V per MOSFET 0.45 K/W Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated 1) CoolMOS is a trademark of Infineon Technologies AG. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2002 IXYS All rights reserved 1-2 238 VHM40-06P1 Reverse diodes (FRED) Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 18.5 12.0 A A Dimensions in mm (1 mm = 0.0394") Symbol VF IRM t rr RthJC RthJH Conditions IF = 15 A; TVJ = 25C TVJ = 125C Characteristic Values min. typ. max. 2.58 1.8 7 70 7 ns 3.5 K/W K/W 2.64 V V A IF = 10 A; diF/dt = 400 A/s; TVJ = 125C VR = 300 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 m) Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K Module Symbol TVJ Tstg VISOL Md a IISOL 1 mA; 50/60 Hz; t = 1 s mounting torque (M4) Max. allowable acceleration Conditions Maximum Ratings -40...+150 -40...+125 3600 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s2 Symbol dS dA Weight Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g IXYS reserves the right to change limits, test conditions and dimensions. (c) 2002 IXYS All rights reserved 2-2 238 |
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